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ZXMP3A16G
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = -30V: RDS(on) = 0.045 : ID = -7.5A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
SOT223
FEATURES
* Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT223 package
APPLICATIONS
* DC-DC converters * Power management functions * Relay and soleniod driving * Motor control
PINOUT
ORDERING INFORMATION
DEVICE ZXMP3A16GTA ZXMP3A16GTC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units
DEVICE MARKING
* ZXMP 3A16
Top View
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ZXMP3A16G
ABSOLUTE MAXIMUM RATING
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V GS = -10V; T A =25C)(b) (V GS = -10V; T A =70C)(b) (V GS = -10V; T A =25C)(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A =25C (a) Linear Derating Factor Power Dissipation at T A =25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT -30 20 -7.5 -6.0 -5.4 -24.9 -3.2 -24.9 2.0 16 3.9 31 -55 to +150 UNIT V V A
I DM IS I SM PD PD T j :T stg
A A A W mW/C W mW/C C
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 62.5 32.2 UNIT C/W C/W
NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
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ZXMP3A16G
TYPICAL CHARACTERISTICS
-ID Drain Current (A)
10 Limited 1
Max Power Dissipation (W)
RDS(on)
2.0 1.6 1.2 0.8 0.4 0.0 0 20 40 60 80 100 120 140 160
DC 1s 100ms 10ms Single Pulse Tamb=25C 1ms 100s
100m 10m
-VDS Drain-Source Voltage (V)
1
10
Temperature (C)
Safe Operating Area
70
Derating Curve
Thermal Resistance (C/W)
60 50 40 30 20 10
MaximumPower (W)
Tamb=25C
100
Single Pulse Tamb=25C
D=0.5
10
D=0.2 D=0.1
Single Pulse D=0.05
0 100 1m
10m 100m
1
10
100
1k
1 100 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
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ZXMP3A16G
ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) V SD t rr Q rr -0.85 21.7 16.1 -0.95 V ns nC T J =25 C, I S =-3.6A, V GS =0V T J =25 C, I F =-2A, di/dt= 100A/ s t d(on) tr t d(off) tf Qg Qg Q gs Q gd 3.8 6.5 37.1 21.4 17.2 29.6 2.8 8.6 ns ns ns ns nC nC nC nC V DS =-15V,V GS =-10V, I D =-4.2A V DS =-15V,V GS =-5V, I D =-4.2A V DD =-15V, I D =-1A R G =6.0 , V GS =-10V C iss C oss C rss 1022 267 229 pF pF pF V DS =-15V, V GS =0V, f=1MHz V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 9.2 -1.0 0.045 0.070 S -30 -1 100 V A nA V I D =-250A, V GS =0V V DS =-30V, V GS =0V V GS = 20V, V DS =0V I =-250 A, V DS = V GS
D
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
V GS =-10V, I D =-4.2A V GS =-4.5V, I D =-3.4A V DS =-15V,I D =-4.2A
NOTES (1) Measured under pulsed conditions. Width 300 s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
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ZXMP3A16G
TYPICAL CHARACTERISTICS
T = 25C
10V
4V
-ID Drain Current (A)
10
-ID Drain Current (A)
3.5V 3V 2.5V 2V -VGS
T = 150C
10V
4V
10
3.5V 3V 2.5V 2V 1.5V
1
1
-VGS
0.1
1.5V
0.1
0.01
0.1
-VDS Drain-Source Voltage (V)
1
10
0.01
0.1
-VDS Drain-Source Voltage (V)
1
10
Output Characteristics
1.6
T = 150C T = 25C
Output Characteristics
VGS = -10V ID = -4.2A RDS(on)
Normalised RDS(on) and VGS(th)
10
-ID Drain Current (A)
1.4 1.2 1.0 0.8 0.6 0.4 -50 0
1
VGS(th) VGS = VDS ID = -250uA
-VDS = 10V
0.1 1
2
3
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (C)
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance ()
Normalised Curves v Temperature
100
-ISD Reverse Drain Current (A)
100 10 1 0.1 0.01 0.01
1.5V -VGS 2V
T = 25C
T = 150C
10 1 0.1
T = 25C
2.5V 3V 3.5V 4V 10V
0.1
1
10
0.01 0.0
On-Resistance v Drain Current
-ID Drain Current (A)
-VSD Source-Drain Voltage (V)
0.2
0.4
0.6
0.8
1.0
1.2
Source-Drain Diode Forward Voltage
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ZXMP3A16G
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ZXMP3A16G
Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: "Preview"Future device intended for production at some point. Samples may be available "Active"Product status recommended for new designs "Last time buy (LTB)"Device will be discontinued and last time buy period and delivery is in effect "Not recommended for new designs"Device is still in production to support existing designs and production "Obsolete"Production has been discontinued Datasheet status key: "Draft version"This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. "Provisional version"This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue"This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice.
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ZXMP3A16G
PACKAGE OUTLINE PAD LAYOUT DETAILS
PACKAGE DIMENSIONS
Millimeters DIM Min A A1 b b2 C D 0.02 0.66 2.90 0.23 6.30 Max 1.80 0.10 0.84 3.10 0.33 6.70 Min 0.0008 0.026 0.114 0.009 0.248 Max 0.071 0.004 0.033 0.122 0.013 0.264 e e1 E E1 L Inches DIM Min Max Min Max 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 Millimeters Inches
(c) Zetex Semiconductors plc 2007
Europe Zetex GmbH Kustermann-Park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
ISSUE 3 - MAY 2007 8

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